Packet-based integrated circuit dynamic random access memory device incorporating an on-chip row register cache to reduce data access latencies

ABSTRACT

A packet-based dynamic random access memory (“DRAM”) device incorporating an on-chip row register cache which is functional to reduce the initial device latency, reduce “page miss” latency and reduce chip layout overhead by reducing bus sizes and the level of required multiplexing and demultiplexing compared to Rambus® Direct RDRAM™ (trademarks, of Rambus, Inc., Mountain View, Calif.) devices. In accordance with an embodiment of the present invention, the row register cache and a separate write path, or bus, are integrated into each DRAM bank serving to improve DRAM latency parameters and pipeline burst rate, The row register holds “read” data during burst reads to allow hidden precharge and same bank activation to minimize “page miss” latency. The faster pipelined burst rate simplifies Direct RDRAM multiplexer/demultiplexer logic and reduces internal data bus size by 50%.

BACKGROUND OF THE INVENTION

The present invention relates, in general, to the field of integratedcircuit (“IC”) dynamic random access memory (“DRAM”) devices. Moreparticularly, the present invention relates to a packet-based DRAMmemory device incorporating an on-chip row register cache which isfunctional to reduce overall data access latencies, especially withrespect to “page misses”.

A new type of volatile random access memory devices has been recentlyintroduced which uses low pin count interfaces operating at high clockrates to multiplex memory control, address, and data in and out of thechip. These so called “protocol-based” or “packet-based” memories havethe benefit of delivering high potential bandwidth in a low-pin countsingle chip IC package. This approach is particularly interesting forsmall systems containing just a single processor component and a singlememory device.

The Rambus® DRAM (“RDRAM™” trademarks of Rambus, Inc., Mountain View,Calif.) was the first of several proposed packet-based DRAM devices. Themost current version of this product was developed in conjunction withIntel Corporation, Santa Clara, Calif. and is called the Direct RambusDRAM (or “DRDRAM”). See for example, Rambus® Technology Overview,Rambus, Inc., Aug. 23, 1999 and Direct RDRAM™ Advance Information64/72-Mbit (256K×16/18×16d) Rambus, Inc. Aug. 3, 1998, the disclosuresof which are specifically incorporated herein by this reference. TheDirect RDRAM has been optimized to allow concurrent command, address,and data packets to be transferred to improve the efficiency of the businterface.

Nevertheless, the DRDRAM presents several operational limitations whichprevent its optimum performance and cost effectiveness. Firstly, theDRDRAM architecture imposes significantly larger chip sizes than arefound in traditional DRAM components. This size increase results fromthe need to multiplex and demultipex data and addresses at the businterface. Specifically, the current DRDRAM embodiment has a relativelycomplex eight way multiplexer and demultiplexer interface to theexternal data bus. This level of multiplexing is determined by theexternal data bus size and pipelined data speed of the core DRAM memorybanks. The 18 bit external data bus is specified at an 800 MHz data rateand the DRAM core must deliver a 1.6 GB/sec. bandwidth. Current DRAMcores can deliver a new data-word every 10 ns or a 100 MHz data rate.For this core, the internal DRAM bus must be eight times 18 bits (or 144bits) to deliver the specified data rate.

Secondly, multiplexing address and data buses increases random accesslatency compared to synchronous DRAM (“SDRAM”). At 800 MHz, addresspacket delays are 10 ns and data packet delays for a 64 bit equivalentword are 5 ns. Consequently, every SDRAM random access parameter isdegraded by 15 ns in Direct RDRAM.

Thirdly, standard DRAM core exhibits relatively long latency on samebank “page misses” which reduce bus efficiency. The standard DRAM coreuses page mode operation, which means that data is held in the DRAMsense amplifiers during random access within a page. If a request foranother page in the same bank occurs, the DRAM must precharge and thenanother row must be randomly accessed into the sense amps. This “pagemiss” can take on the order of 70 ns in current DRAM technology. A “pagemiss” greatly reduces bus efficiency and delivered bandwidth. Themaximum bandwidth for the device is equal to four data words (64 bit) at5 ns/data word, which is 20 ns for 32 bytes, or 1600 MB/sec. On theother hand, the worst case bandwidth (in the case of a “page miss”,Read-to-Read) is 77.5 ns (“page miss”) plus three data word (64-bit)times at 5 ns/data word which equals 92.5 ns for 32 bytes or 338 MB/sec.Thus, it can be seen that Direct RDRAM bus efficiency is reduced from100% to 21% under continuous random “page misses” while deliveredbandwidth is reduced from 1600 MB/Sec to 338 MB/Sec.

SUMMARY OF THE INVENTION

Enhanced Memory Systems, Inc., a subsidiary of Ramtron InternationalCorporation, Colorado Springs, Colo. and assignee of the presentinvention, has long been a pioneer in defining low latency, highefficiency DRAM core architectures based on its proprietary EDRAM® coretechnology (EDRAM® is a registered trademark of Enhanced Memory Systems,Inc., Colorado Springs, Colo.). See for example, U.S. Pat. Nos.5,699,317, 5,721,862, and 5,887,272, the disclosures of which arespecifically incorporated herein by this reference, and which disclosecertain implementations of the application of this technology tostandard DRAM architectures.

Disclosed herein are extensions of this EDRAM technology implemented toenhance packet-based DRAM architectures, such as Direct RDRAM, to reducethe initial device latency, reduce “page miss” latency and reduce chiplayout overhead by reducing bus sizes and the level of requiredmultiplexing and demultiplexing.

In accordance with an embodiment of the present invention disclosedherein, a row register (or “cache”) and separate write path, or bus, areintegrated into each DRAM bank. This enhanced DRAM architecture,improves DRAM latency parameters and pipeline burst rate. The rowregister holds “read” data during burst reads to allow hidden prechargeand same bank activation to minimize “page miss” latency. The fasterpipelined burst rate simplifies Rambus RDRAM multiplexer/demultiplexerlogic and reduces internal data bus size by 50%.

Particularly disclosed herein is a packet-based integrated circuitdevice comprising at least one dynamic random access memory bank havingassociated row and column decoders for specifying memory locationstherein in response to externally supplied row and column addresses. Thedevice includes at least one sense amplifier circuit coupled to thecolumn decoder for reading data from the memory bank, a row registercoupled to the sense amplifier circuit for retaining at least a portionof the data read out from the memory bank, a multiplexer circuitcoupling the row register to an external data bus for supplying the readout data thereon and a demultiplexer circuit coupling the external databus to the sense amplifier circuit for supplying data applied to theexternal data bus to the memory bank.

BRIEF DESCRIPTION OF THE DRAWINGS

The aforementioned and other features and objects of the presentinvention and the manner of attaining them will become more apparent andthe invention itself will be best understood by reference to thefollowing description of a preferred embodiment taken in conjunctionwith the accompanying drawings, wherein:

FIG. 1 illustrates a conventional Direct Rambus DRAM architectureillustrating the need for a 144 bit internal data bus and 8:1multiplexing and de-multiplexing to a bi-directional 18 bit externaldata bus;

FIG. 2 illustrates a packet-based DRAM memory device in accordance withan embodiment of the present invention incorporating one or more on-chipregisters (or “cache”) which retains at least a portion of data read outfrom the DRAM banks and having a 72 bit internal data bus and 4:1multiplexing and de-multiplexing to a bi-directional 18 bit externaldata bus;

FIG. 3A is a simplified timing diagram of the row, column and dataactivity for a “page miss” occurring between two consecutive “read”transactions for the conventional Direct RDRAM of FIG. 1;

FIG. 3B is a corresponding simplified timing diagram of the row, columnand data activity for a “page miss” occurring between two consecutive“read” transactions for the memory device of FIG. 2 in accordance withthe present invention;

FIG. 4A is an additional simplified timing diagram of the row, columnand data activity for a “page miss” occurring between consecutive “read”and “write” transactions for the conventional Direct RDRAM of FIG. 1;and

FIG. 4B is a corresponding simplified timing diagram of the row, columnand data activity for a “page miss” occurring between consecutive “read”and “write” transactions for the memory device of FIG. 2.

DESCRIPTION OF A PREFERRED EMBODIMENT

With reference now to FIG. 1, a conventional Direct Rambus DRAM device10 architecture is shown. The Direct RDRAM device 10 comprises, inpertinent part, one or more DRAM banks 12 and associated row decoders 11and column decoders 13. A number of DRAM sense amplifiers 14 couple theDRAM banks 12 through the column decoders 13 to an internal 144 bit databus as shown.

Access to the memory locations in the DRAM banks 12 is had via anaddress bus coupled to 8 to 1 row address demultiplexers 16 and 18 forsupplying row and column addresses to the row decoders 11 and columndecoders respectively. Control signals for the Direct RDRAM device 10are also supplied externally through an additional 8 to 1 commanddemultiplexer 20.

The 144 bit internal data bus provides data read from the DRAM banks 12to an 8 to 1 multiplexer 22, the output of which is selected by gates 24for output from the Direct RDRAM 10 on an 18 bit bi-directional data bus26. Data to be written to the Direct RDRAM device 10 is supplied on the18 bit data bus 26 and selected by gates 28 to an 8 to 1 demultiplexer30 having an associated write buffer 32 for temporary retention of datato be ultimately written to the DRAM banks 12. The output of the writebuffer 32 is supplied to the DRAM sense amplifiers 14 through theinternal 144 bit data bus. As can be seen, the Direct RDRAM device 10requires a relatively wide 144 bit internal data bus in addition to theprovision of 8:1 multiplexing and demultiplexing to the bi-directional18 bit external data bus 26.

With reference additionally now to FIG. 2; a packet-based DRAM memorydevice 50 in accordance with an embodiment of the present invention isshown. The memory device 50 includes DRAM banks 52, associated rowdecoders 51 and column decoders 53 together with DRAM sense amplifiers54 as in the conventional Direct RDRAM device 10 shown in the precedingfigure. However, the memory device 50 further incorporates one or moreon-chip row registers (or “cache”) 56 which retain at least a portion ofdata read out from the DRAM banks 52.

Access to the memory device 50 is afforded through respective row andcolumn address demultiplexers coupled to an external address bus forsupplying row and column addresses to the row decoders 51 and columndecoders 53. Likewise, control signals for the memory device 50 aresupplied through a command demultiplexer 62.

At least a portion of the data read out from the DRAM banks 52 ismaintained in the row register cache 56 and is then supplied on a 72 bitinternal read data bus to a 4 to 1 multiplexer 64. The output of the 4to 1 multiplexer 64 is then selected by gates 66 for output on anexternal 18 bit data bus 68. Data to be written to the memory device 50is supplied on the 18 bit data bus 68 and selected through gates 70 forinput to a 4 to 1 demultiplexer 72 having an associated write buffer 74.Data to be written to the DRAM banks 52 is temporarily retained in thewrite buffer 74 for application to the DRAM sense amplifiers. 54 over a72 bit internal write data bus. As can be seen, the memory device 50includes a row register 56 for faster access to data in addition to arelatively smaller 72 bit internal data bus and simplified 4:1multiplexing and de-multiplexing to the bi-directional 18 bit externaldata bus 68 while simultaneously presenting an external interfaceequivalent to that of the conventional Direct RDRAM device 10 of FIG. 1.

The memory device 50 appears externally identical to a conventionalDirect RDRAM 10 (FIG. 1) but has a different DRAM core implementationusing a set of row register caches 56 tightly integrated with the DRAMsense amplifiers 54 and a separate write path that allows writes to godirectly to the sense amplifiers 54. The integrated row register cache56 supports a faster 5 ns (or 200 MHz) pipelined burst rate that allowsthe internal data path to be reduced to 72 bits (from 144 bits in theconventional Direct RDRAM 10) and a simpler 4 to 1 multiplexer 64 anddemultiplexer 72 at the data interface.

In addition to simplifying the data path, multiplex and demultiplexinglogic and reducing the internal bus wiring by 50%, the enhanced DRAMcore of the memory device 50 improves basic DRAM parameters as shown inthe following Table 1:

TABLE 1 Conventional Parameter DRDRAM 10 Memory Device 50 t_(RC) 70 ns35 ns t_(RAS) 50 ns 25 ns t_(RP) 20 ns 15 ns t_(RR) 20 ns 15 ns t_(RCD)22.5 ns   15 ns t_(RAC) 45 ns 25 ns t_(CAC) 20 ns 10 ns t_(CWD) 15 ns 10ns t_(Packet) 10 ns 10 ns t_(RTR) 20 ns 15 ns t_(OFFP) 10 ns  0 ns

With respect to the foregoing Table 1, t_(RC) is the row cycle time;t_(RAS) is the row address strobe (“RAS”)-asserted time; t_(RP) is therow precharge time; t_(RR) is the RAS-to-RAS time; t_(RCD) is the RAS tocolumn address strobe (“CAS”) delay time; t_(RAC) is the RAS accessdelay time; t_(CAC) is, the CAS access delay time; t_(CWD) is the CASwrite delay time; t_(Packet) is the length of the packet; t_(RTR) is theinterval from a column operation (“COLC”) packet with a write precharge(“WR”) command to COLC packet which causes retire; and t_(OFFP) is theinterval from COLC packet with a read precharge (“RDA”) command.

These improvements in DRAM core speed reduce the impact of theAddress/Command and data packet delays by at least 10 ns and 5 nsrespectively.

Row Access Time

=t_(Packet)+t_(RCD)+t_(CAC)+0.5*t_(Packet)

=10 ns+22.5 ns+20 ns+5 ns=57.5 ns

for the conventional Direct DRDRAM 10;

=10 ns+15 ns+10 ns+5 ns=40 ns

for the memory device 50.

Row Access Improvement

=(57.5 ns−40 ns)/40 ns=44%

due to the row register cache 56 and DRAM banks 52 core.

Column Access Time

=t_(Packet)+t_(CAC)+0.5*t_(Packet)

=10 ns+20 ns+5 ns=35 ns

for the conventional Direct DRDRAM 10;

=10 ns+10 ns+5 ns=25 ns

for the memory device 50.

Column Access Time Improvement

=(35 ns−25 ns)/25 ns=40%

due to the row register cache 56 and DRAM banks 52 core.

The fast EDRAM Core of the memory device 50 also improves the latency ofpage misses following write cycles:

Page Miss (Write-to-Read)

=0.5*t_(Packet)+t_(RP)+t_(RCD)+t_(CAC)+0.5*t_(Packet)

=5 ns+20 ns+22.5 ns+20 ns+5 ns=72.5 ns

for the conventional Direct RDRAM 10;

=5 ns+15 ns+15 ns+10 ns+5 ns=50 ns

for the memory device 50.

Pass Miss (Write-to-Read) Improvement

=(72.5 ns−50 ns)/50 ns=45%

due to the row register cache 56 and DRAM banks 52 core.

Page Miss (Write-to-Write)

=0.5*t_(Packet)+t_(RP)+t_(RCD)+t_(CWD)+0.5*t_(Packet)

=5 ns+20 ns+22.5 ns+15 ns+5 ns=67.5 ns

for the conventional Direct RDRAM 10;

=5 ns+15 ns+15 ns+10 ns+5 ns=50 ns

for the memory device 50.

Page Miss (Write-to-Write) Improvement

=(67.5 ns−50 ns)/50 ns=35%

due to the row register cache 56 and DRAM banks 52 core.

In addition to faster DRAM core architecture, the memory device 50architecture allows hidden precharge and a same Row activation featurethat results from the row register cache 56 holding the read data duringburst reads. This caching allows concurrent precharge and row activationfunctions not allowed by the Direct RDRAM device 10 core.

In the exemplary embodiment of the memory device 50 shown, the DRAM coremay be constructed with any number of DRAM bank 12 array blocks. Eacharray block has associated sense amplifiers 54, a row register cache 56,and separate logic path to allow write operations to go to the senseamplifiers 54 and read operations to be from the row register cache 56,which may comprise static random access memory (“SRAM”) or other highspeed memory. The DRAM banks 52 and integrated row register cache 56interface with a 72 bit internal data bus which is coupled to a datapath multiplexer 64 and demultiplexer 72 logic at the chip interface.During read data transfers, the DRAM banks 52 with integrated rowregister cache 56 places 72 bits of data (4 data words) on the internaldata bus every 5 ns. The multiplexer 64 logic sequentially selects onedata word to the output data bus 68 every 1.25 ns. The conventionalRambus interface of the Direct RDRAM device 10 operates at a 400 MHz(2.5 ns clock cycle) rate and data is placed on the output data bus 26(FIG. 1) on both the rising and falling edge of the clock.

During writes, data is input to the demultiplexer 72 logic of the memorydevice 50 every 1.25 ns (rising and falling edges of the clock). Thewrite buffer 74 accumulates 4 data words every 5 ns. This write buffer74 is double buffered so that 72 bit of write data is written to theselected DRAM bank 52 every 5 ns while additional write data is beinginput to the primary buffer stage.

Read Operations

A read operation is initiated by a row packet on the row input bus. Therow address and command are multiplexed into the chip on the rising andfalling clock edges at a 1.25 ns rate. A total of four clock cycles arenecessary to input the row packet and command (10 ns). Once the rowpacket is input and the command decoded, the DRAM bank 52 is selectedand the selected row address is read into the sense amplifiers 54 ofthat bank after the time t_(RCD) (15 ns). In parallel with the rowaccess, a column address and read command are multiplexed over thecolumn address bus during four clock cycles. It is timed to arrive aftert_(RCD). Once the read command is executed, the sense amplifier 54 datais latched into the row register cache 56 for the selected bank and 72bits of data is transferred to the output multiplexer 64 over the nextfour clock periods. At the end of this period, the row register cache 56is latched and an additional 72 bit words are transferred to themultiplexer 64 every two clock cycles (5 ns). If the read command isissued with an auto precharge or if a manual precharge is placed on therow address bus during the packet time following the column readcommand, the DRAM bank 52 will enter precharge four clocks (1 packetdelay, t_(Packet)) following the read command. The precharge time(t_(RP)) occurs while data is being transferred to the multiplexer 64from the row register cache 56. The entire precharge delay is hiddenduring a two packet data transfer (32 byte transfer).

Once the precharge time is complete, it is possible to begin the nextaccess to the same bank by another row address, bank activate command onthe multiplexed row address bus. This information can be timed toinitiate the command as soon as the t_(RP) time is met for a 32 bytedata transfer and one half of a packet (5 ns) of the row-to-column delaycan be hidden to reduce “page miss” latency. For longer transfers, theentire row-to-column delay can be hidden. The combination of hiddenprecharge and hidden same bank activation reduces the “page miss”read-to-read latency from 77.5 ns in the conventional Direct RDRAMdevice 10 (FIG. 1) to 25 ns for the memory device 50 (FIG. 2).

Write Operations

A write operation is initiated by a row packet with bank activatecommand on the row bus. The information is clocked on four clock cycles,or 10 ns. At the end of the packet transfer, the command is decoded, theselected bank is activated and the row address is read to the senseamplifiers 54 in a time t_(RCD). The column address packet with writecommand is transferred in parallel with t_(RCD). As soon as it isreceived, the specified column address in the sense amplifiers 54 isselected and write data can begin being input to the demultiplexer 72.After a time t_(CWD), data packets are input to the write buffer 74.

After every two clock cycles (5 ns), data is written over the 72 bitinternal bus to the select sense amplifier 54 location, the columnaddress is incremented and another 72 bit word is written each 5 nsperiod. As soon as the last packet is received, a precharge command maybe issued (or precharge will automatically begin on write aauto-precharge command) a one half packet delay (5 ns) after the lastdata input. This restores data to the DRAM banks 52 and readies the DRAMfor the next cycle.

With reference additionally now to FIG. 3A, a simplified timing diagramof the row, column and data activity for a “page miss” occurring betweentwo consecutive “read” transactions for the conventional Direct RDRAMdevice 10 of FIG. 1 is shown.

It should be noted that the Direct RDRAM device 10 keeps column data inthe sense amplifiers 14 of the DRAM. The precharge command cannotinitiate the precharge cycle on a “page miss” until time, t_(OFFP),after the last data packet. The combination of late precharge and slowDRAM core parameters results in long “page miss” latency and poor busefficiency for same bank “page misses”.

With reference additionally now to FIG. 3B, a corresponding simplifiedtiming diagram of the row, column and data activity for a “page miss”occurring between two consecutive “read” transactions for the memorydevice 50 of FIG. 2 in accordance with the present invention is shown.

As shown, the memory device 50 can begin a precharge command in thepacket following the column read command. This is possible since theread page is latched into the row register cache 56 at the end of onepacket delay (10 ns) allowing DRAM bank 52 precharge to occur during thedata burst. It should also be noted that the next random row packet canbegin before the completion of the packets. In this example, one halfpacket delay (5 ns) of the row to column delay is eliminated from the“page miss” latency.

The following is a comparison of the “page miss” (Read-to-Read) latencybetween the Direct RDRAM device 10 (FIG. 1) and the memory device 50(FIG. 2) of the present invention:

Page Miss (Read-to-Read)

=t_(OFFP)+t_(RP)+t_(RCD)+t_(CAC)+0.5*t_(Packet)

=10 ns+20 ns+22.5 ns+20 ns+5 ns=77.5 ns

for the Direct RDRAM 10;

=t_(RCD)−0.5 t_(Packet)+t_(CAC)+0.5*t_(Packet)

=15 ns−5 ns+10 ns+5 ns=25 ns

for the memory device 50.

Page Miss Improvement

=(77.5 ns−25 ns)/25 ns=210%

due to the row register cache 56 and DRAM banks 52 core speed plus thehidden precharge plus the hidden same bank activation feature. Thehidden precharge and same bank activation features also reduce “pagemiss” latency for write cycles following a read as will be more fullydescribed hereinafter.

With reference additionally now to FIG. 4A, an additional simplifiedtiming diagram of the row, column and data activity for a “page miss”occurring between consecutive “read” and “write” transactions for theconventional Direct RDRAM device 10 of FIG. 1 is shown.

Since the Direct RDRAM device 10 holds data in the sense amplifiers 14during a burst read, the precharge command does not occur until t_(OFFP)after the last read data. The DRAM banks 12 memory must then prechargeand another row must be accessed to the sense amplifiers 14 before datacan be written.

With reference additionally now to FIG. 4B, a corresponding simplifiedtiming diagram of the row, column and data activity for a “page miss”occurring between consecutive “read” and “write” transactions for thememory device 50 of FIG. 2 is shown.

Page Miss Latency (Read-to-Write)

=t_(OFFP)+t_(RP)+t_(RCD)+t_(CWD)+0.5*t_(Packet)

=10 ns+20 ns+22.5 ns+15 ns+5 ns=72.5 ns

for the conventional Direct RDRAM 10;

=t_(RCD)−0.5*t_(Packet)+t_(CWD)+0.5*t_(Packet)

=15 ns−5 ns+10 ns+5 ns=25 ns

for the memory device 50.

Page Miss Improvement (Read-to-Write)

=72.5 ns−25 ns/25 ns=190%

due to the row register cache 56 and DRAM banks 52 core plus the hiddenprecharge and hidden same bank activation.

As can be seen, the use of the EDRAM core architecture in the memorydevice 50 in conjunction with the conventional Rambus Direct RDRAMarchitecture or other packet-based DRAM devices provides at least thefollowing benefits:

1) Reduction in On-chip Overhead:

Reduces internal data path from 144 bits to 72 bits; and

Reduces the multiplexer/demultiplexer logic from 8 to 1 to 4 to 1.

2) Reduction in Initial Latency:

Reduces initial latency of conventional Direct RDRAM;

Reduces row access time from 57.5 ns to 40 ns (44%); and

Reduces column access time from 35 ns to 25 ns (40%).

3) Reduction of Same Bank “page miss” Latency of Conventional DirectRDRAM:

Reduces read to read “page miss” from 77.5 ns to 25 ns (210%);

Reduces read to write “page miss” from 72.5 ns to 25 ns (190%);

Reduces write to read “page miss” from 72.5 ns to 50 ns (45%); and

Reduces write to write “page miss” from 67.5 ns to 50 ns (35%).

While there have been described above the principles of the presentinvention in conjunction with specific device structure it is to beclearly understood that the foregoing description is made only by way ofexample and not as a limitation to the scope of the invention.Particularly, it is recognized that the teachings of the foregoingdisclosure will suggest other modifications to those persons skilled inthe relevant art. Such modifications may involve other features whichare already known per se and which may be used instead of or in additionto features already described herein. Although claims have beenformulated in this application to particular combinations of features,it should be understood that the scope of the disclosure herein alsoincludes any novel feature or any novel combination of featuresdisclosed either explicitly or implicitly or any generalization ormodification thereof which would be apparent to persons skilled in therelevant art, whether or not such relates to the same invention aspresently claimed in any claim and whether or not it mitigates any orall of the same technical problems as confronted by the presentinvention. The applicants hereby reserve the right to formulate newclaims to such features and/or combinations of such features during theprosecution of the present application or of any further applicationderived therefrom.

What is claimed is:
 1. A packet-based integrated circuit deviceincluding an address bus and internal read and write data buses, saiddevice comprising: at least one dynamic random access memory bank; a rowdecoder associated with each of said at least one dynamic random accessmemory bank, said row decoder being coupled to receive a row address onsaid address bus; a row register associated with each of said at leastone dynamic random access memory bank, said row register for providingat least a portion of a row of data accessed from a selected row of anassociated one of said at least one dynamic access memory bank to saidread data bus in response to a corresponding row address provided by anassociated row decoder; a column decoder associated with each of saidrow register, said column decoder being coupled to receive a columnaddress on said address bus; and a sense amplifier circuit coupled tosaid write data bus and associated with each of said at least onedynamic random access memory bank and coupled between said at least onedynamic access memory bank and an associated row register, said senseamplifier circuit operative to provide data to be written at a specifiedlocation in an associated one of said at least one dynamic random accessmemory bank in response to said row and column addresses, wherein saidrow register is operative to retain said at least a portion of said rowof data accessed from said selected row of said associated one of saidat least one dynamic random access memory bank until overwritten byupdated data supplied on said write data bus corresponding to saidselected row.
 2. The packet-based integrated circuit device of claim 1wherein said updated data may be written substantially concurrently tosaid row register and said selected row of said dynamic random accessmemory bank.
 3. A packet-based integrated circuit device including anaddress bus and internal read and write data buses, said devicecomprising: at least one dynamic random access memory bank; a rowdecoder associated with each of said at least one dynamic random accessmemory bank, said row decoder being coupled to receive a row address onsaid address bus; a row register associated with each of said at leastone dynamic random access memory bank, said row register for providingat least a portion of a row of data accessed from a selected row of anassociated one of said at least one dynamic access memory bank to saidread data bus in response to a corresponding row address provided by anassociated row decoder; a column decoder associated with each of saidrow register, said column decoder being coupled to receive a columnaddress on said address bus; and a sense amplifier circuit coupled tosaid write data bus and associated with each of said at least onedynamic random access memory bank and coupled between said at least onedynamic access memory bank and an associated row register, said senseamplifier circuit operative to provide data to be written at a specifiedlocation in an associated one of said at least one dynamic random accessmemory bank in response to said row and column addresses, wherein saiddata to be written to said device is selectively writable substantiallyconcurrently to said row register.
 4. The packet-based integratedcircuit device of claim 3 wherein said data to be written to said deviceis selectively writable substantially concurrently to said row registerif said row of data to be written to said associated one of said dynamicaccess random memory bank corresponds to said selected row.
 5. Apacket-based integrated circuit device including an address bus andinternal read and write data buses, said device comprising: at least onedynamic random access memory bank; a row decoder associated with each ofsaid at least one dynamic random access memory bank, said row decoderbeing coupled to receive a row address on said address bus; a rowregister associated with each of said at least one dynamic random accessmemory bank, said row register for providing at least a portion of a rowof data accessed from a selected row of an associated one of said atleast one dynamic access memory bank to said read data bus in responseto a corresponding row address provided by an associated row decoder; acolumn decoder associated with each of said row register, said columndecoder being coupled to receive a column address on said address bus;and a sense amplifier circuit coupled to said write data bus andassociated with each of said at least one dynamic random access memorybank and coupled between said at least one dynamic access memory bankand an associated row register, said sense amplifier circuit operativeto provide data to be written at a specified location in an associatedone of said at least one dynamic random access memory bank in responseto said row and column addresses, wherein said sense amplifier circuitis selectively decouplable from said associated row register and said atleast one dynamic random access memory bank may be precharged while saidsense amplifier circuit is decoupled from said associated row register.6. The packet-based integrated circuit device of claim 5 wherein said atleast a portion of said row of data retained in said row register may beprovided to said read data bus while said dynamic random access memorybank is precharged.
 7. A packet-based integrated circuit deviceincluding an address bus and internal read and write data buses, saiddevice comprising: at least one dynamic random access memory bank; a rowdecoder associated with each of said at least one dynamic random accessmemory bank, said row decoder being coupled to receive a row address onsaid address bus; a row register associated with each of said at leastone dynamic random access memory bank, said row register for providingat least a portion of a row of data accessed from a selected row of anassociated one of said at least one dynamic access memory bank to saidread data bus in response to a corresponding row address provided by anassociated row decoder; a column decoder associated with each of saidrow register, said column decoder being coupled to receive a columnaddress on said address bus; and a sense amplifier circuit coupled tosaid write data bus and associated with each of said at least onedynamic random access memory bank and coupled between said at least onedynamic access memory bank and an associated row register, said senseamplifier circuit operative to provide data to be written at a specifiedlocation in an associated one of said at least one dynamic random accessmemory bank in response to said row and column addresses, wherein saidsense amplifier circuit is selectively decouplable from said associatedrow register and said at least one dynamic random access memory bank maybe refreshed while said sense amplifier circuit is decoupled from saidassociated row register.
 8. The packet-based integrated circuit deviceof claim 5 wherein said at least a portion of said row of data retainedin said row register may be provided to said read data bus while said atleast one dynamic access memory bank is refreshed.